Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers

نویسندگان

چکیده

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical electronic properties can be significantly enhanced when encapsulated an environment that is free charge disorder. Because hexagonal boron nitride (h-BN) atomically thin, highly-crystalline, a strong insulator, it one most commonly used 2D materials to encapsulate passivate TMDCs. In this report, we examine how ultrathin h-BN shields underlying MoS2 TMDC layer from energetic argon plasmas routinely during semiconductor device fabrication post-processing. Aberration-corrected Scanning Transmission Electron Microscopy analyze defect formation both layers, these observations correlated with Raman photoluminescence spectroscopy. Our results highlight effective barrier short plasma exposures (< 30 secs) but ineffective longer exposures, which result extensive knock-on damage amorphization MoS2.

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ژورنال

عنوان ژورنال: Journal of vacuum science & technology

سال: 2021

ISSN: ['2327-9877', '0734-211X']

DOI: https://doi.org/10.1116/6.0000874